Nonlinear carrier transport within gigahertz- terahertz frequencies in spatially non-uniform InSb
نویسنده
چکیده
Influence of a dc electric field, microwave and terahertz (up to 1.63 THz) excitation on the carrier transport in moderately compensated n-InSb containing graded n/n+ junction is investigated. Hot electron thermo-electromotive force and field dependences of the dc-conductivity were measured within 10-110 K. Peculiarities of electron gas heating and lowtemperature electron transport can be attributed to the potential fluctuation effects due to random spatial distribution of impurity density in high-resistivity InSb crystal.
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